@inproceedings{4bf2adba56b545888dc388be51a021c2,
title = "Simulation of recess-structure dependence of gate-lag phenomena in GaAs MESFETs",
abstract = "We have made two-dimensional simulation of turn-on characteristics of recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag or the slow current transient (which may occur due to surface states) is affected by the recess-structural parameters and the off-state gate voltage V Goff. It is shown that when VGoff is around the threshold voltage (pinch-off voltage) Vth, the gate-lag could be greatly reduced by introducing the buried-gate structure. However, it is suggested that large gate-lag might be seen when VGoff is much more negative than Vth.",
keywords = "Buried gate, GaAs MESFET, Gate lag, Recessed gate, Surface state",
author = "K. Horio and Y. Mitani and A. Wakabayashi",
year = "2001",
month = dec,
day = "1",
language = "English",
isbn = "0970827504",
series = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001",
pages = "510--513",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001",
note = "2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001 ; Conference date: 19-03-2001 Through 21-03-2001",
}