@inproceedings{0c7f2354002c4d418e23dedc6cd0d505,
title = "Simulation of removal of surface-state-related lag and current slump in GaAs FETs",
abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of lag phenomena and current slump on field-plate length and SiO 2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.",
keywords = "Current slump, Drain lag, GaAs FET, Gate lag, Surface state",
author = "H. Hafiz and M. Kumeno and K. Horio",
year = "2012",
month = aug,
day = "17",
language = "English",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "582--585",
booktitle = "Nanotechnology 2012",
note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",
}