@inproceedings{6f6cd6d9e87c4c309af4bba6b4092c5e,
title = "Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs",
abstract = "Two-dimensional analysis of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and surface states (traps) are considered. It is studied how so-called gate lag is affected by these traps. It is shown that gate lag due to buffer traps can occur because in the off state, electrons are injected into the buffer layer and captured by the traps. It is also shown that gate lag due to an electron-trap-type surface state can occur only when electron's gate tunneling is considered. Dependence of gate lag on buffer-trap parameters is also studied.",
keywords = "AlGaN/GaN HEMT, Gate lag, Gate tunneling, Surface state, Trap",
author = "K. Horio and A. Nakajima and K. Fujii",
year = "2010",
month = nov,
day = "9",
language = "English",
isbn = "9781439834022",
series = "Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010",
pages = "693--696",
booktitle = "Nanotechnology 2010",
note = "Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 ; Conference date: 21-06-2010 Through 24-06-2010",
}