TY - GEN
T1 - Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs
AU - Horio, Kazushige
AU - Fuseya, Yasuji
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.
AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.
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U2 - 10.1109/GAAS.1992.247266
DO - 10.1109/GAAS.1992.247266
M3 - Conference contribution
AN - SCOPUS:85067386503
T3 - GaAs IC Symposium Technical Digest 1992
SP - 241
EP - 244
BT - GaAs IC Symposium Technical Digest 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992
Y2 - 4 October 1997 through 7 October 1997
ER -