Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Physics & Astronomy

• field effect transistors 50%
• trapping 49%
• requirements 44%
• buffers 36%
• simulation 24%
• high speed 16%
• traps 16%
• performance 9%

Engineering & Materials Science

• Buffer layers 92%
• Drain current 82%
• Substrates 45%

Chemical Compounds

• Drain Current 100%
• Trap Density Measurement 49%
• Simulation 41%