Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada; Kengo Ochi; Hiroyuki Kawahara; Takuro Tomita; Shigeki Matsuo; Makoto Yamaguchi; Kouichi Higashimine; Tsunenobu Kimoto

doi:10.1143/JJAP.45.7625

Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO₂- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

本文言語	English
ページ（範囲）	7625-7631
ページ数	7
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	45
号	10 A
DOI	https://doi.org/10.1143/JJAP.45.7625
出版ステータス	Published - 2006 10月 15
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.45.7625

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title = "Source of surface morphological defects formed on 4H-SiC homoepitaxial films",

abstract = "Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.",

keywords = "Homoepitaxial film, Sheared frank dislocation, Silicon carbide (SiC), Surface morphological defect, Transmission electron microscopy (TEM), Zirconia (ZrO) inclusion, micro-Raman spectroscopy",

author = "Tatsuya Okada and Kengo Ochi and Hiroyuki Kawahara and Takuro Tomita and Shigeki Matsuo and Makoto Yamaguchi and Kouichi Higashimine and Tsunenobu Kimoto",

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AU - Okada, Tatsuya

AU - Ochi, Kengo

AU - Kawahara, Hiroyuki

AU - Tomita, Takuro

AU - Matsuo, Shigeki

AU - Yamaguchi, Makoto

AU - Higashimine, Kouichi

AU - Kimoto, Tsunenobu

PY - 2006/10/15

Y1 - 2006/10/15

N2 - Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

AB - Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

KW - Homoepitaxial film

KW - Sheared frank dislocation

KW - Silicon carbide (SiC)

KW - Surface morphological defect

KW - Transmission electron microscopy (TEM)

KW - Zirconia (ZrO) inclusion

KW - micro-Raman spectroscopy

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10 A

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Source of surface morphological defects formed on 4H-SiC homoepitaxial films

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