抄録
The presence of dislocations has been revealed by numerical processing of high-resolution transmission electron microscopy images from the regions affected by a shock wave propagation. The shock wave was triggered by a single 220 fs duration pulse of 30 nJ at an 800 nm wavelength inside sapphire at approximately 10 μm depth. The shock-amorphised sapphire has a distinct boundary with the crystalline phase, which is not wet etchable even at a dislocation density of e∼ 8×1012 cm-2.
本文言語 | English |
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ページ(範囲) | 197-200 |
ページ数 | 4 |
ジャーナル | Applied Physics A: Materials Science and Processing |
巻 | 86 |
号 | 2 |
DOI | |
出版ステータス | Published - 2007 2月 |
外部発表 | はい |
ASJC Scopus subject areas
- 化学 (全般)
- 材料科学(全般)