Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi; T. Egawa; H. Ishikawa

Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi, T. Egawa, H. Ishikawa

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1527-1531
ジャーナル	J. Vac. Sci. Technol. B,
巻	Vol. 23
出版ステータス	Published - 2005 8月 1

引用スタイル

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title = "Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties",

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language = "English",

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AU - Egawa, T.

AU - Ishikawa, H.

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JO - J. Vac. Sci. Technol. B,

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