A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.
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