Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

Tetsuya Homma; Hiroyasu Kondo; Kazuaki Inohara; Masahiro Nomoto; Masaya Sakamoto; Yuji Ariyama; Hideo Takahashi

doi:10.1016/S0040-6090(01)01014-8

Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

Tetsuya Homma, Hiroyasu Kondo, Kazuaki Inohara, Masahiro Nomoto, Masaya Sakamoto, Yuji Ariyama, Hideo Takahashi

研究成果: Article › 査読

1 被引用数 (Scopus)

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Changes of an organic spin-on-glass (SOG) film surface on liquid-phase deposition of fluorinated silicon oxide film in the fabrication of thin-film optical waveguides were studied. Refractive indices for the organic SOG films were decreased uniformly by approximately 1% after treatment with hydrofluosilicic acid (H₂SiF₆) aqueous solution. Reflectance evaluated at a wavelength of 632.8 nm for the organic SOG films was increased by 1% after H₂SiF₆ treatment. No clear change of silicon, carbon and oxygen peaks was observed in the Auger electron spectra after H₂SiF₆ treatment. Three typical fluorine (F) peaks were observed at the surfaces of organic SOG films after H₂SiF₆ treatment. The F peaks disappeared after in situ argon ion etching for 10 s. It was clarified that H₂SiF₆ treatment does not affect the bond structure of Si-CH₃ in the organic SOG films. A very weak absorption peak of the Si-F bond was observed in Fourier transform infrared spectra after H₂SiF₆ treatment. It was speculated that changes of optical properties were due to the adsorption of Si(OH)_4-xF_x species to the organic SOG film surface.

本文言語	English
ページ（範囲）	107-112
ページ数	6
ジャーナル	Thin Solid Films
巻	392
号	1
DOI	https://doi.org/10.1016/S0040-6090(01)01014-8
出版ステータス	Published - 2001 7月 23

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

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10.1016/S0040-6090(01)01014-8

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@article{a010c193bfac4eb6aa6a4e819392cae3,

title = "Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide",

abstract = "Changes of an organic spin-on-glass (SOG) film surface on liquid-phase deposition of fluorinated silicon oxide film in the fabrication of thin-film optical waveguides were studied. Refractive indices for the organic SOG films were decreased uniformly by approximately 1% after treatment with hydrofluosilicic acid (H2SiF6) aqueous solution. Reflectance evaluated at a wavelength of 632.8 nm for the organic SOG films was increased by 1% after H2SiF6 treatment. No clear change of silicon, carbon and oxygen peaks was observed in the Auger electron spectra after H2SiF6 treatment. Three typical fluorine (F) peaks were observed at the surfaces of organic SOG films after H2SiF6 treatment. The F peaks disappeared after in situ argon ion etching for 10 s. It was clarified that H2SiF6 treatment does not affect the bond structure of Si-CH3 in the organic SOG films. A very weak absorption peak of the Si-F bond was observed in Fourier transform infrared spectra after H2SiF6 treatment. It was speculated that changes of optical properties were due to the adsorption of Si(OH)4-xFx species to the organic SOG film surface.",

keywords = "Fluorinated silicon oxide, Reflectance, Refractive index, Spin-on-glass, Thin-film optical waveguide",

author = "Tetsuya Homma and Hiroyasu Kondo and Kazuaki Inohara and Masahiro Nomoto and Masaya Sakamoto and Yuji Ariyama and Hideo Takahashi",

note = "Funding Information: The authors thank Dr T. Nagatomo for his encouragement. They appreciate Dr M. Yamaguchi for his support in measurements. They also thank Mr Y. Sakai and Mr K. Takemura of Nippon Sheet Glass Co., Ltd for their support in LPD experiments. They would like to thank Mr T. Tatsuno and Mr T. Kobayashi of Morita Chemical Industries Co., Ltd for supplying H 2 SiF 6 solution, and also Mr A. Tanaka and Mr S. Ishii of Rasa Industries Ltd for the supplying SOG solution. This work was supported in part by a project research fund from the Shibaura Institute of Technology, and by the High-Tech Research Center Project from the Ministry of Education, Science, Sports and Culture of Japan.",

year = "2001",

month = jul,

day = "23",

doi = "10.1016/S0040-6090(01)01014-8",

language = "English",

volume = "392",

pages = "107--112",

journal = "Thin Solid Films",

issn = "0040-6090",

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number = "1",

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TY - JOUR

T1 - Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

AU - Homma, Tetsuya

AU - Kondo, Hiroyasu

AU - Inohara, Kazuaki

AU - Nomoto, Masahiro

AU - Sakamoto, Masaya

AU - Ariyama, Yuji

AU - Takahashi, Hideo

N1 - Funding Information: The authors thank Dr T. Nagatomo for his encouragement. They appreciate Dr M. Yamaguchi for his support in measurements. They also thank Mr Y. Sakai and Mr K. Takemura of Nippon Sheet Glass Co., Ltd for their support in LPD experiments. They would like to thank Mr T. Tatsuno and Mr T. Kobayashi of Morita Chemical Industries Co., Ltd for supplying H 2 SiF 6 solution, and also Mr A. Tanaka and Mr S. Ishii of Rasa Industries Ltd for the supplying SOG solution. This work was supported in part by a project research fund from the Shibaura Institute of Technology, and by the High-Tech Research Center Project from the Ministry of Education, Science, Sports and Culture of Japan.

PY - 2001/7/23

Y1 - 2001/7/23

N2 - Changes of an organic spin-on-glass (SOG) film surface on liquid-phase deposition of fluorinated silicon oxide film in the fabrication of thin-film optical waveguides were studied. Refractive indices for the organic SOG films were decreased uniformly by approximately 1% after treatment with hydrofluosilicic acid (H2SiF6) aqueous solution. Reflectance evaluated at a wavelength of 632.8 nm for the organic SOG films was increased by 1% after H2SiF6 treatment. No clear change of silicon, carbon and oxygen peaks was observed in the Auger electron spectra after H2SiF6 treatment. Three typical fluorine (F) peaks were observed at the surfaces of organic SOG films after H2SiF6 treatment. The F peaks disappeared after in situ argon ion etching for 10 s. It was clarified that H2SiF6 treatment does not affect the bond structure of Si-CH3 in the organic SOG films. A very weak absorption peak of the Si-F bond was observed in Fourier transform infrared spectra after H2SiF6 treatment. It was speculated that changes of optical properties were due to the adsorption of Si(OH)4-xFx species to the organic SOG film surface.

AB - Changes of an organic spin-on-glass (SOG) film surface on liquid-phase deposition of fluorinated silicon oxide film in the fabrication of thin-film optical waveguides were studied. Refractive indices for the organic SOG films were decreased uniformly by approximately 1% after treatment with hydrofluosilicic acid (H2SiF6) aqueous solution. Reflectance evaluated at a wavelength of 632.8 nm for the organic SOG films was increased by 1% after H2SiF6 treatment. No clear change of silicon, carbon and oxygen peaks was observed in the Auger electron spectra after H2SiF6 treatment. Three typical fluorine (F) peaks were observed at the surfaces of organic SOG films after H2SiF6 treatment. The F peaks disappeared after in situ argon ion etching for 10 s. It was clarified that H2SiF6 treatment does not affect the bond structure of Si-CH3 in the organic SOG films. A very weak absorption peak of the Si-F bond was observed in Fourier transform infrared spectra after H2SiF6 treatment. It was speculated that changes of optical properties were due to the adsorption of Si(OH)4-xFx species to the organic SOG film surface.

KW - Fluorinated silicon oxide

KW - Reflectance

KW - Refractive index

KW - Spin-on-glass

KW - Thin-film optical waveguide

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U2 - 10.1016/S0040-6090(01)01014-8

DO - 10.1016/S0040-6090(01)01014-8

M3 - Article

AN - SCOPUS:0035939542

SN - 0040-6090

VL - 392

SP - 107

EP - 112

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

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