Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo; Y. Sano

doi:10.1063/1.1642276

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, Y. Sano

研究成果: Article › 査読

209 被引用数 (Scopus)

抄録

The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I _Dmax) and extrinsic transductance(g_mmax) was observed on comparing the passivated (SiO₂, Si₃N₄ and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I _gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BV_gd) on SiO₂ passivated HEMT were due to the formation of deep traps.

本文言語	English
ページ（範囲）	613-615
ページ数	3
ジャーナル	Applied Physics Letters
巻	84
号	4
DOI	https://doi.org/10.1063/1.1642276
出版ステータス	Published - 2004 1月 26
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1642276

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引用スタイル

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AU - Sano, Y.

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