抄録
We have proposed a new method for in-situ doping of multiwall carbon nanotubes (MWCNTs) by catalytic CVD using nickel boron (NiB) as the catalyst. Raman spectrum measurements were carried out to determine the effects of doping using NiB catalysts with different B-concentrations at different CVD temperatures. The characteristic shifts in the Raman spectra which indicate carrier doping were demonstrated for the NiB catalyst with 18 atomic % B at the CVD temperature of 900°C. The CNT crystallinity was improved by a new catalyst structure with a B-capping layer over the NiB catalyst.
本文言語 | English |
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ホスト出版物のタイトル | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ページ | 198-199 |
ページ数 | 2 |
ISBN(電子版) | 9781509003860 |
DOI | |
出版ステータス | Published - 2016 7月 8 |
イベント | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States 継続期間: 2016 5月 23 → 2016 5月 26 |
Other
Other | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 |
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国/地域 | United States |
City | San Jose |
Period | 16/5/23 → 16/5/26 |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料
- 金属および合金
- 表面、皮膜および薄膜