Synthesis of Ti-Al-Si-N nanocomposite films using liquid injection PECVD from alkoxide precursors

Y. S. Li, S. Shimada, H. Kiyono, A. Hirose

研究成果: Article査読

55 被引用数 (Scopus)


A series of nitride films of the Ti-Al-Si system have been synthesized at about 750 °C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning and transmission electron microscopy. Amorphous SiNx and crystalline AlN and TiN films were formed in their individual cases, while the SiNx-containing (Ti/Al)Si-N composite films showed a two-phase microstructure consisting of amorphous SiNx matrix and embedded TiN, AlN, or TiAlN nanocrystals. The Si-rich nanocomposite films demonstrated superior high-temperature oxidation resistance. After two hours of air exposure at 900 °C, no elemental segregation was observed in the nitride films and their structures remained basically unaffected. The fundamental mechanism is discussed in terms of the chemically high inertness of amorphous SiNx interfacial phase and thereby the high thermal stability of the composite nitride films with unique nanostructures.

ジャーナルActa Materialia
出版ステータスPublished - 2006 5月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • ポリマーおよびプラスチック
  • 金属および合金


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