The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame T.Nabatame; K.Segawa K.Segawa; M.Kadoshima M.Kadoshima; H.Takaba H.Takaba; K.Iwamoto K.Iwamoto; S.Kimura S.Kimura; Y.Nunoshige Y.Nunoshige; H.Satake H.Satake; T.Ohishi T.Ohishi; A.Toriumi A.Toriumi; Tomoji Oishi

The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

T.Nabatame T.Nabatame, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Iwamoto K.Iwamoto, S.Kimura S.Kimura, Y.Nunoshige Y.Nunoshige, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

地域環境システム専攻

研究成果: Article › 査読

16 被引用数 (Scopus)

本文言語	English
ページ（範囲）	975-979
ジャーナル	Materials Science in Semiconductor Orocessing
巻	9
出版ステータス	Published - 2006 12月 17

引用スタイル

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title = "The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure",

author = "T.Nabatame T.Nabatame and K.Segawa K.Segawa and M.Kadoshima M.Kadoshima and H.Takaba H.Takaba and K.Iwamoto K.Iwamoto and S.Kimura S.Kimura and Y.Nunoshige Y.Nunoshige and H.Satake H.Satake and T.Ohishi T.Ohishi and A.Toriumi A.Toriumi and Tomoji Oishi",

year = "2006",

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language = "English",

volume = "9",

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T1 - The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure

AU - T.Nabatame, T.Nabatame

AU - K.Segawa, K.Segawa

AU - M.Kadoshima, M.Kadoshima

AU - H.Takaba, H.Takaba

AU - K.Iwamoto, K.Iwamoto

AU - S.Kimura, S.Kimura

AU - Y.Nunoshige, Y.Nunoshige

AU - H.Satake, H.Satake

AU - T.Ohishi, T.Ohishi

AU - A.Toriumi, A.Toriumi

AU - Oishi, Tomoji

PY - 2006/12/17

Y1 - 2006/12/17

M3 - Article

VL - 9

SP - 975

EP - 979

JO - Materials Science in Semiconductor Orocessing

JF - Materials Science in Semiconductor Orocessing

ER -