Near-field scaning optical microscopy (NSOM) revealed many important features of semiconductor nanostructures. As such, the unprecedented high spatial resolution of NSOM was achieved recently and a stikingly new feature in the single-dot spectroscopy was reported. The observation was interpreted in terms of a kind of the dead-layer model which gives a qualitative interpretation, a more quantitative theory that was necessary to estimate the ratio of the FWHM of the spatial extent of both luminescence pattens and to understand the quantum-dot-size dependence of that ratio.
|出版ステータス||Published - 2003 12月 1|
|イベント||Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States|
継続期間: 2003 6月 1 → 2003 6月 6
|Other||Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)|
|Period||03/6/1 → 03/6/6|
ASJC Scopus subject areas