Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Engineering & Materials Science

• High electron mobility transistors 71%
• Annealing 61%
• Leakage currents 44%
• Metals 39%
• Diodes 37%
• Epilayers 35%
• Rapid thermal annealing 31%
• Hot Temperature 29%
• Transconductance 24%
• Nitrogen 19%
• Heat treatment 17%
• Transistors 17%
• Electronic equipment 17%
• Materials properties 17%
• Electrodes 15%
• Degradation 14%

Chemical Compounds

• Schottky Contact 100%
• Electron Mobility 73%
• Work Function 71%
• Leakage Current 54%
• Annealing 48%
• Transconductance 31%
• Metal 27%
• Reduction 18%
• Nitrogen 12%
• Behavior as Electrode 10%

Physics & Astronomy

• high electron mobility transistors 63%
• insertion 60%
• electric contacts 54%
• annealing 36%
• leakage 33%
• metals 31%
• transconductance 22%
• Schottky diodes 21%
• transistors 16%
• diodes 15%
• degradation 15%
• nitrogen 15%
• electrodes 12%
• electronics 10%
• performance 9%