Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

Engineering & Materials Science

• Chemical beam epitaxy 100%
• Growth temperature 88%
• Nitrogen 50%
• Microscopes 15%
• Semiconductor quantum wells 12%
• Desorption 8%
• Surface morphology 8%
• Activation energy 8%
• X ray diffraction 7%
• Pyrolysis 7%
• Temperature 3%

Physics & Astronomy

• epitaxy 54%
• nitrogen 40%
• temperature 16%
• microscopes 10%
• pyrolysis 6%
• desorption 6%
• quantum wells 5%
• activation energy 5%
• temperature dependence 4%
• diffraction 3%
• x rays 3%