Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

Y.Fuseya Y.Fuseya, K.Horio K.Horio, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	66-67
ジャーナル	Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan
出版ステータス	Published - 1991 5月 1

引用スタイル

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title = "Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels",

author = "Y.Fuseya Y.Fuseya and K.Horio K.Horio and Kazushige Horio",

year = "1991",

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journal = "Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan",

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AU - Y.Fuseya, Y.Fuseya

AU - K.Horio, K.Horio

AU - Horio, Kazushige

PY - 1991/5/1

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JO - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

JF - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

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