Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio; N. Kurosawa

doi:10.1049/el:19980892

Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio, N. Kurosawa

研究成果: Article › 査読

抄録

Two-dimensional simulation of cutoff frequency (f_T) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in f_T resulting from the so-called carrier-blocking effect is shown to be suppressed.

本文言語	English
ページ（範囲）	1436-1437
ページ数	2
ジャーナル	Electronics Letters
巻	34
号	14
DOI	https://doi.org/10.1049/el:19980892
出版ステータス	Published - 1998 7月 9

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19980892

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@article{2d4deca80ba7461e91370a9e8ec50923,

title = "Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs",

abstract = "Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.",

author = "K. Horio and N. Kurosawa",

year = "1998",

month = jul,

day = "9",

doi = "10.1049/el:19980892",

language = "English",

volume = "34",

pages = "1436--1437",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

}

TY - JOUR

T1 - Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

AU - Horio, K.

AU - Kurosawa, N.

PY - 1998/7/9

Y1 - 1998/7/9

N2 - Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

AB - Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

UR - http://www.scopus.com/inward/record.url?scp=0032117951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032117951&partnerID=8YFLogxK

U2 - 10.1049/el:19980892

DO - 10.1049/el:19980892

M3 - Article

AN - SCOPUS:0032117951

SN - 0013-5194

VL - 34

SP - 1436

EP - 1437

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

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