Effects of surface states on turn-on characteristics of recessed-gate GaAs MESFETs are studied by two-dimensional simulation. It is found that the recess depth dr is deep and the distance between the gate and the recess edge Lr is set to be very narrow, the gate-lag (slow current transient) extinguishes for a case with surface states considered on horizontal planes only. However, in a realistic case with surface states included on both horizontal and vertical planes, the gate-lag is not eliminated even if dr is made rather deep. This is attributed to the fact that when the deep-acceptor-like surface state acts as a hole trap, the thickness of surface depletion layer can change much by the applied gate bias. To eliminate the gate-lag, the deep acceptor should be made electron-trap type. This can be realized by reducing the surface state density.
|出版ステータス||Published - 1997 12月 1|
|イベント||Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK|
継続期間: 1997 11月 24 → 1997 11月 25
|Other||Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO|
|Period||97/11/24 → 97/11/25|
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