Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

K.Horio K.Horio, H.Takayanagi H.Takayanagi, H.Nakano H.Nakano, K.Yonemoto K.Yonemoto, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1-9
ジャーナル	Shibaura Institute of Technology
巻	50
出版ステータス	Published - 2006 9月 30

引用スタイル

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title = "Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer",

author = "K.Horio K.Horio and H.Takayanagi H.Takayanagi and H.Nakano H.Nakano and K.Yonemoto K.Yonemoto and Kazushige Horio",

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T1 - Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

AU - K.Horio, K.Horio

AU - H.Takayanagi, H.Takayanagi

AU - H.Nakano, H.Nakano

AU - K.Yonemoto, K.Yonemoto

AU - Horio, Kazushige

PY - 2006/9/30

Y1 - 2006/9/30

M3 - Article

VL - 50

SP - 1

EP - 9

JO - Shibaura Institute of Technology

JF - Shibaura Institute of Technology

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