抄録
Effects of substrate traps on turn-on characteristics of GaAs MESFET's are studied by two-dimensional (2-D) simulation. When the off-state gate voltage is much more negative than the threshold (pinch-off) voltage and the surface-state effects are small, abnormal current overshoot and subsequent slow transients are observed for the case with undoped semi-insulating substrate including an electron trap: EL2. Even if the surface-state effects are pronounced to show the large gate-lag, the drain current may show the overshoot-like behavior at relatively early periods. The case of Cr-doped substrate with a hole trap: Cr is also discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 617-624 |
| ページ数 | 8 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 47 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2000 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学