Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	339-342
ジャーナル	Institute of Physics Conference Series
巻	Vol.166
出版ステータス	Published - 2000 4月 1

引用スタイル

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title = "Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS",

author = "K.Horio K.Horio and A.Wakabayashi A.Wakabayashi and N.Kurosawa N.Kurosawa and Kazushige Horio",

year = "2000",

month = apr,

day = "1",

language = "English",

volume = "Vol.166",

pages = "339--342",

journal = "Institute of Physics Conference Series",

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T1 - Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

AU - K.Horio, K.Horio

AU - A.Wakabayashi, A.Wakabayashi

AU - N.Kurosawa, N.Kurosawa

AU - Horio, Kazushige

PY - 2000/4/1

Y1 - 2000/4/1

M3 - Article

VL - Vol.166

SP - 339

EP - 342

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -