Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	339-342
ジャーナル	Proceedings of ISCS'99, Berlin, Germany
出版ステータス	Published - 1999 8月 1

引用スタイル

@article{74f81d935adc4f798837d29354ab1e89,

title = "Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs",

author = "K.Horio K.Horio and A.Wakabayashi A.Wakabayashi and N.Kurosawa N.Kurosawa and Kazushige Horio",

year = "1999",

month = aug,

day = "1",

language = "English",

pages = "339--342",

journal = "Proceedings of ISCS'99, Berlin, Germany",

}