抄録
2-D simulation of backgating effect in GaAs MESFET's is made in which impact ionization of carriers and deep donors 'EL2' in the substrate are considered. The kink-related backgating is reproduced, which is qualitatively consistent with recent experiments. The mechanism is attributed to the change of EL2's nature by capturing holes which are generated by impact ionization and flow into the substrate.
| 本文言語 | English |
|---|---|
| ページ | 115-118 |
| ページ数 | 4 |
| 出版ステータス | Published - 1995 12月 1 |
| イベント | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong 継続期間: 1995 11月 6 → 1995 11月 10 |
Other
| Other | Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 95/11/6 → 95/11/10 |
ASJC Scopus subject areas
- コンピュータ サイエンスの応用
- 電子工学および電気工学