Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio; Y.Fuseya Y.Fuseya; Kazushige Horio

Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, Kazushige Horio

電気電子情報工学専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1340-1346
ジャーナル	IEEE Trans. Electron Devices
巻	41
出版ステータス	Published - 1994 8月 1

引用スタイル

@article{b15c8030e8cc49c680af90450e6019e8,

title = "Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET{\textquoteright}s with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and Kazushige Horio",

year = "1994",

month = aug,

day = "1",

language = "English",

volume = "41",

pages = "1340--1346",

journal = "IEEE Trans. Electron Devices",

}