Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K. Horio, Y. Fuseya

研究成果: Article › 査読

本文言語	English
ページ（範囲）	410-413
ジャーナル	Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France
出版ステータス	Published - 1992 9月 1

引用スタイル

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