TY - GEN
T1 - Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer
AU - Ueno, K.
AU - Sekiguchi, A.
AU - Kobayashi, A.
N1 - Publisher Copyright:
© 1998 IEEE.
PY - 1998
Y1 - 1998
N2 - The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture.
AB - The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture.
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U2 - 10.1109/IITC.1998.704768
DO - 10.1109/IITC.1998.704768
M3 - Conference contribution
AN - SCOPUS:33751145470
T3 - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
SP - 119
EP - 121
BT - Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1998 IEEE International Interconnect Technology Conference, IITC 1998
Y2 - 1 June 1998 through 3 June 1998
ER -