TY - JOUR
T1 - Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology
AU - Kamogawa, Kenji
AU - Nishikawa, Kenjiro
AU - Yamaguchi, Chikara
AU - Hirano, Makoto
AU - Toyoda, Ichihiko
AU - Tokumitsu, Tsuneo
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.
AB - The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.
UR - http://www.scopus.com/inward/record.url?scp=0030655062&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030655062&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0030655062
SN - 0149-645X
VL - 3
SP - 1221
EP - 1224
JO - IEEE MTT-S International Microwave Symposium Digest
JF - IEEE MTT-S International Microwave Symposium Digest
T2 - Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
Y2 - 8 June 1997 through 13 June 1997
ER -