TY - CONF
T1 - Wafer surface treatment for integrating laser diode and optical isolator by direct bonding
AU - Mizumoto, T.
AU - Yokoi, H.
AU - Shimizu, M.
AU - Waniishi, T.
AU - Futakuchi, N.
AU - Kaida, N.
AU - Nakano, Y.
N1 - Funding Information:
The authors would like to thank to Dr. Naito, Professor Emeritus, for continuous encouragement. This work was partially supported by Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries, Research fbr the Future from Japan Society for the Promotion of Sciences (JSPS-RFTF97P00103).
Publisher Copyright:
© 1999 China Inst. Of Communications.
PY - 1998
Y1 - 1998
N2 - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.
AB - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.
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U2 - 10.1109/APCC.1999.820618
DO - 10.1109/APCC.1999.820618
M3 - Paper
AN - SCOPUS:85049798835
SP - 1662
EP - 1664
T2 - 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
Y2 - 18 October 1999 through 22 October 1999
ER -