良好な絶縁性を有する c 軸配向 PZT 系単結晶薄膜のSi 基板上への形成

This paper reports on an approach to fabricate c-axis-oriented PZT-based monocrystalline thin film with high insulation property on Si. We found that the insulation property of the PZT-based monocrystalline thin film on a buffer layer prepared via pulsed laser deposition (PLD) were relatably low. The particle-shaped debris generated in PLD perhaps led to this worse insulation property. It was also found that the insulation property can be improved by additional PZT deposition via a sol-gel process, while the c-axis orientation was decreased. Eventually, the PZT thin film on a buffer layer prepared via sputter deposition exhibited higher insulation property comparable with those of general PZT thin films. This study successfully gives a great knowledge for obtaining the electrically-reliable PZT-based monocrystalline thin film on Si.